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| SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE "SuperBAT" ISSUE 1- September 1997 FEATURES: * Low V F * High Current Capability APPLICATIONS: * DC - DC converters * Mobile telecomms * PCMCIA PARTMARK DETAIL: ZS5 7 1 ZHCS500 C 1 A 3 2 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Continuous Reverse Voltage Forward Current (Continuous) Forward Voltage @ IF = 500mA Average Peak Forward Current; D.C. = 50% Non Repetitive Forward Current t100s t10ms Power Dissipation at Tamb= 25 C Storage Temperature Range Junction Temperature SYMBOL VR IF VF IFAV IFSM Ptot Tstg Tj VALUE 40 500 550 1000 6.75 3 330 -55 to + 150 125 UNIT V mA mV mA A A mW C C ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). PARAMETER Reverse Breakdown Voltage Forward Voltage SYMBOL V (BR)R VF MIN. 40 TYP. 60 270 300 370 465 550 640 810 440 15 20 10 300 350 460 550 670 780 1050 40 MAX. UNIT V mV mV mV mV mV mV mV mV A pF ns CONDITIONS. IR= 200A IF= IF= IF= IF= IF= IF= IF= IF= 50mA* 100mA* 250mA* 500mA* 750mA* 1000mA* 1500mA* 500mA, Tamb= 100 C* Reverse Current Diode Capacitance Reverse Recovery Time IR CD trr V R= 30V f= 1MHz,V R= 25V switched from IF = 500mA to IR = 500mA Measured at IR = 50mA *Measured under pulsed conditions. Pulse width= 300s; duty cycle 2% . ZHCS500 TYPICAL CHARACTERISTICS 1 100m IF - Forward Current (A) IR - Reverse Current (A) 10m 1m +125C +100C 100m 100u 10u +50C +25C 10m +125C +25C -55C 1u 100n 10n 1n -55C 1m 0 0.1 0.2 0.3 0.4 0.5 0 10 20 30 40 VF - Forward Voltage (V) IF v VF VR - Reverse Voltage (V) IR v VR 0.6 t 0.4 DC D=t 1/t PF(av) - Avg Pwr Diss (W) 1 IF(av) - Avg Fwd Cur (A) p I F(pk) Tj=125C D=0.5 t 0.3 p 0.4 D=0.2 I F(av) =DxI PF(av) =I F(av) F(pk) xV F 0.2 t 1 0.2 D=t 1/t p D=0.1 D=0.05 I F(pk) 0.1 DC DC=0.5 DC=0.2 DC=0.1 DC=0.05 t p I F(av) =DxI PF(av) =I F(av) F(pk) 0 100 105 110 115 120 125 0 xV F 0 0.1 0.2 0.3 0.4 0.5 0.6 TC - Case Temperature (C) IF(av) - Avg Fwd Curr (A) IF(av) v TC PF(av) v IF(av) 125 90 Rth=100 C/W Rth=200C/W CD - Diode Capacitance (pF) Ta - Ambient Temp (C) 95 Rth=300C/W 50 65 1 10 100 0 0 10 20 30 40 VR - Reverse Voltage (V) VR - Reverse Voltage (V) Ta v VR CD v VR ZHCS500 TYPICAL CHARACTERISTICS 300 D=1 t p 1 D=t 1/t RTHj-a (C/W) 200 D=0.5 t p 100 Single Pulse D=0.2 D=0.1 D=0.05 0 100u 1m 10m 100m 1 10 100 Pulse Width (s) |
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